"Radiation Hardened FPGA Technology"

Leonard Rockett1, Dinu Patel1, Steven Danziger1, Balwinder Sujlana1,Les Palkuti2,
John McCollum3, J.J. Wang3, Brian Cronquist3, and Frank Hawley3

1BAE SYSTEMS
2Defense Threat Reduction Agency
3Actel Corporation

Abstract

High performance, high density radiation hardened Field Programmable Gate Arrays (FPGAs) are in great demand for military and space applications. BAE Systems and Actel Corp. have collaborated for over 10 years as suppliers of 0.8 µm ONO (Oxide Nitride Oxide) anti-fuse based radiation hardened FPGAs. BAE Systems, in partnership with the DoD community, has modernized its process facility located in Manassas, VA to support a strategically radiation hardened 0.15 µm bulk CMOS process technology. . Currently DTRA is sponsoring efforts to install Actel’s Metal to Metal based AX250 FPGA in BAE Systems’ upgraded radiation hardened process facility at 0.15 µm so that strategically hardened parts having same form, fit and function as the commercial version, are available for next generation military and space systems.. This paper will describe radiation hardness data on the base rad hard 0.15 µm CMOS process, the extensions to the process that specifically address the FPGA requirements and pertinent radiation data on device structures , anti-fuse arrays and the progress of the overall product installation effort.

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