"Flash Memory Device Characterization: Pre and Post Radiation Effects"

L.O. Quarrie1, K.M. Bowden1, A.H. Le1, W.R. Spencer1, S.W. Teare2, S.M. Bracht2, J.L. Meason3,
T. Jesson4, R.L. Brady4, M. Bobowski1

1 Syndetix Incorporated
2 Electrical Engineering Department, New Mexico Tech
3 Energetic Materials Research and Testing Center, New Mexico Tech
4 White Sands Missile Range, DATTS-SVAD

Abstract:

Military and space commercial systems are remaining in service and in active use far beyond their planned operational lifetime. This extended service is leading to a shortage of replacement components, many of which are now obsolete or will become obsolete within the near future. When the Military went from MIL-Specs to performance-based specs (the Perry Initiative) and started using more commercial-off-the-shelf (COTS) products, the need for an advanced design and testing facility to qualify the electrical, environmental and radiological performance of COTS microelectronics and other lower assemblies to meet military and commercial standards dramatically increased. The Advanced Microelectronics Laboratory (AML) at New Mexico Tech Energetic Materials Research and Testing Center (EMRTC), Microelectronics Testing and Technology Obsolescence Program (METTOP) has been designed to support the needs of our military and commercial customers by qualifying components for use in satellites, space platforms, and legacy and future combat systems (FCS) that are subject to radiation effects. Here we demonstrate some of the capabilities of the AML facility as applied to commonly used microelectronics and lower assemblies. In particular we report on the pre and post characterization results of a total dose radiation test done on an SST28SF040A / SST39LF040A 4 MB (512k x8) SuperFlash EEPROM chip, a non-volatile flash memory device.

 

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