This is a test of the RT54SX72S, 0.25 µm, MEC die which used the the TMRSX32_Pattern logical pattern. This is an extract of the full report and will concentrate on two potential damaging effects: single event latchup and antifuse or gate rupture. For both of these tests, high voltage is a stressful condition. For single event latchup, the "cosine rule" applies and higher effective LETs may be obtained having the beam hit the device under test at an angle. For rupture, the cosine rule does not apply and the worst-case is with the beam normal to the device under test.
Maximum Recommended Array Voltage: 2.5 V + 8% (2.7 V)
Package: CQFP256
Serial Nos. LAN6201, LAN6202
D/C: 0125
L/C: T25KS001
Test frequency: 1 MHz.
DUT schematics: TMRSX32_Logic.ppt. (slight change in pinout as a result of package incompatibility between 32S and 72S).
Total Number of Flip-flops: 800 (user flip-flops).
Clock Configuration: HCLK
Ions used:
279 MeV Br-81
321 MeV I-127
Antifuse rupture: Probably detected.
SEL: not detected.
Loss of control, i.e., JTAG upset: not detected.
Note: Voltages in red denote either an antifuse test or a single event latchup test.
BNL |
S/N | Ion |
LET |
Tilt |
Roll |
Supply Voltages |
Fluence |
Strip Charts (included for runs with damage) |
| S/N 6201 Single Event Latchup Test | ||||||||
| 316 | 6201 | Br | 53 | 45 | 0 | 5.5/3.0 | 107 |
|
| 426 | 6201 | I | 84 | 45 | 84 | 5.5/2.75 | 107 |
|
427 |
6201 |
I |
110 |
57 | 84 | 5.5/2.75 | 107 |
|
| 428 | 6201 | I | 110 | 57 | 84 | 5.5/2.85 | 107 |
|
| S/N 6201 Single Event Damage Test | ||||||||
| 317 | 6201 | Br | 37 | 0 | 0 | 5.5/2.75 | 107 |
|
| 318 | 6201 | Br | 37 | 0 | 0 | 5.5/3.0 | 107 |
|
| 429 | 6201 | I | 60 | 0 | 0 | 5.5/2.75 | 107 |
|
| 430 | 6201 | I | 60 | 0 | 0 | 5.5/2.85 | 107 |
6201I11.pdf |
| 431 | 6201 | I | 60 | 0 | 0 | 5.5/2.85 | ||
| 432 | 6201 | I | 60 | 0 | 0 | 5.5/2.85 | 4.8 x 105 |
|
| 433 | 6201 | I | 60 | 0 | 0 | 5.5/2.95 | 107 |
6201I14.pdf |
| S/N 6202 Single Event Latchup Test | ||||||||
| 323 | 6202 | Br | 53 | 45 | 0 | 5.5/3.0 | 107 |
|
| 434 | 6202 | I | 84 | 45 | 84 | 5.5/2.75 | 107 |
|
| 435 | 6202 | I | 84 | 45 | 84 | 5.5/2.85 | 107 |
|
| 436 | 6202 | I | 110 | 57 | 84 | 5.5/2.85 | 107 |
|
| S/N 6202 Single Damage Test | ||||||||
| 324 | 6202 | Br | 37 | 0 | 0 | 5.5/3.0 | 107 |
|
| 438 | 6202 | I | 60 | 0 | 0 | 5.5/2.75 | 107 |
|
| 439 | 6202 | I | 60 | 0 | 0 | 5.5/2.85 | 107 |
6202I6.pdf |
| 440 | 6202 | I | 60 | 0 | 0 | 5.5/2.85 | 107 |
6202I7.pdf |
Preliminary findings:
Jumps in the current, which appear to be antifuse damage, were detected at just over the maximum rated voltage with Iodine, at similar incidence. While this is still quite hard, it is not as hard as the RT54SX-series devices, 0.6 um. Note that the commercial A54SX72A, tested during the same test session (PQFP208) had similar rupture characteristics.
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Last Revised: February 03, 2010
Digital Engineering Institute
Web Grunt: Richard Katz
