"Radiation Effects on Non-volatile Memory Devices"
Prairie View A&M University
This paper provides information regarding the of radiation effects on non-volatile memory devices. A study of electrically erasable memory devices from various vendors was conducted. Initially the memory devices were programmed in a predetermined pattern and the electrical parameters such as access time were recorded. The memory devices were bombarded with both dose rate and total dose radiation. The effect of each type of radiation on each memory device was studied carefully. A post radiation analysis was performed on each chip upon failure. This included observing post radiated memory patterns and significant electrical parameters. The failure rates varied from vendor to vendor. Several chips were found to be inherently radiation hardened. This paper provides more information on the radiation study conducted.
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