Title, Authors, Reference, Link | Abstract, Summary, Conclusions |
Single Event Effects Testing of the Intel Pentium III (P3) Microprocessor Thirteenth Biennial Single Effects Symposium Martin A. Carts, Ronald Stattel, Charles E. Rogers: Raytheon/ITSS Timothy L. Irwin, QSS Group, Inc. Kenneth A. LaBel, NASA/GSFC Code 561
howard_see_symp02_with_notes.pdf |
Summary Extensive data has been collected on the total dose and single event response of the Intel Pentium III.The data indicates that there is a high tolerance to total dose and there is no susceptibility to latchup from protons and heavy ions to an LET of approximately 15 MeV-cm 2 /mg.Single event upsets and functional interrupts are present.However,for the Pentium III,if running with the caches disabled is an option and with mitigation in place,these events may be controllable to allow for operation in the space environment. The thermal issues and the power requirements of these processors will most likely be the limiting factors in their usage in space applications. (May 7, 2002) The .ppt file has explanatory text in the notes field. |
D. Hiemstra, S. Yu, M. Pop, MDRobotics Presented at the 2002 IEEE NSREC
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Abstract Experimental single event upset characterization of the Pentium 4, Pentium III and Low power Pentium MMX microprocessors using proton irradiation is presented. Results are compared with previous tests on other Pentium microprocessors.
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tested 2/20-21/96 |
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tested 5/13-16/97 |
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Tested 8/29-9/8/95 |
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Summary All five parts passed initial (pre-rad) electrical tests. All four irradiated parts passed all electrical tests at each irradiation level up to and including the 5 krad(Si) irradiation. After the 7.5 krad(Si) irradiation, all four irradiated parts failed all four functional tests and a number of VOH and VOL tests. All parts continued to fail all four functional tests and a number of VOH and VOL tests throughout all subsequent annealing steps. |
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