HI=Heavy Ion Results
P=Proton Results
SEU=SEU LETth in MeV*cm2/mg
SEL=SEL LETth in MeV*cm2/mg
ssat=device cross section in cm2/device unless stated otherwise
*see the paper for references noted
Part # Function Manuf. Process LETth, ssat Notes
-----> FPGAs
A1280A FPGA Actel CMOS HI: SEL 59.6 [1], SEDR
-----> EEPROMs
HN58C1001 EEPROM Hitachi CMOS HI: SEL > 90 SEL only 28C256 EEPROM SEEQ CHMOS HI: SEL > 90 SEL only
-----> Analog Devices
AD524 Inst. Amp. Analog Dev. Bipolar HI: SEU ~ 11.5 ssat ~ 1E-3 SEL >80 AD565 DAC Analog Dev. CMOS HI: SEU >80 SEU defined as SEL >110 transient ssat <1E-6 >0.5V HS5212 ADC Hybrid Sys. Hybrid HI: SEU 2 ssat ~ 1E-3 SEL >80 ssat ~ 1E-7 7820RP/372 ADC SEI LC2MOS HI: SEL >80 SEL only ssat <1E-7 DAC08AQ DAC PMI Bipolar HI: SEU ~ 3.5 ssat ~ 1.9E-2 SEL >80
-----> Power Devices
SSP21110 Pwr. Cont. DDC Hybrid HI: SEU >80 [2], Immune to -025 SEL >80 SEB, SEGR 2690R-D15F DC-DC conv. MDI Hybrid HI: SEU 4-8 [2], no destr. SEL >72 conditions AHE2815 DC-DC conv. Adv. Analog Hybrid HI: SEU 20-26.6 [2], poss. SEGR @ "switchoff" 26.6 59.6 w/ 28V in; @ SEGR 59.6 26.6 w/ 34V in MFL2805S DC-DC conv. Interpoint Hybrid HI: SEU > 72 [2] SEL > 72 MFL2812S DC-DC conv. Interpoint Hybrid HI: SEU ~50 [2] ssat ~5E-6 SEL > 72 MFL2815D DC-DC conv. Interpoint Hybrid HI: SEU 45-59.7 [2] SEL >72 MFL2815S DC-DC conv. Interpoint Hybrid HI: SEU >72 [2] SEL >72
-----> Linear Devices
LM119 Comparator NSC Bipolar HI: SEL >110 SEL only ssat <1E-6 LM139A Comparator NSC Bipolar HI: SEL >80 SEL only LM193 Comparator NSC Bipolar HI: SEL >100 SEL only ssat <1E-6 LM108AH Op-amp PMI Bipolar HI: SEU ~ 24 ssat ~ 5E-4 SEL ~ 60 LM124 Op-amp NSC Bipolar HI: SEL >90 SEL only LM158 Op-amp NSC Bipolar HI: SEL >100 SEL only ssat <1E-6 OP07AJ Op-amp PMI Bipolar HI: SEU 11.5-13 SEL >50 OP97 Op-amp PMI Bipolar HI: SEL >110 SEL only ssat <1E-6 PA10 Op-amp Apex Bipolar HI: SEL >100 SEL only ssat <1E-6 SMP11 Op-amp PMI Bipolar HI: SEL 80-81.9 SEL only ssat >1E-4 SE5521F Sig. Cond. SGN Bipolar HI: SEL >100 SEL only ssat <1E-6 LM117H Volt. Reg. NSC Bipolar HI: SEL >110 SEL only ssat <1E-6 LM120H Volt. Reg. NSC Bipolar HI: SEL >110 SEL only ssat <1E-6 LM136AH Volt. Reg. NSC Bipolar HI: SEL >110 SEL only ssat <1E-6 LP2951 Volt. Reg. NSC Bipolar HI: SEL > 90 SEL only REF-02 Volt. Ref. PMI Bipolar HI: SEL >100 SEL only -373J ssat <1E-6
-----> RAM
8116400 16M DRAM Fujitsu CMOS HI: SEU <1.41 SEFI observed 60PJ SEL >80 P: SEU-tolerant HM5117400 16M DRAM Hitachi CMOS P: fairly tolerant to RR7 proton-induced SEU KM44C4000 16M DRAM Samsung CMOS HI: SEU<1.46 SEFI and stuck ssat ~1.7E-7 bits seen at 59.6 cm2/bit; SEL >80 MCM516400 16M DRAM Motorola CMOS P: susceptible to J60 proton-induced SEU MCM517400 16M DRAM Motorola CMOS P: susceptible to J60 proton-ind. SEU MT4CM4B1DW 16M DRAM Micron CMOS HI: SEU <1.41 SEL 12-26.6 ssat >2E-4 TC5117400 16M DRAM Toshiba CMOS P: susceptible to FT-70 proton-ind. SEU TC5117400J 16M DRAM Toshiba CMOS HI: SEU<1.46 ssat ~1.8E-7 cm2/bit; SEL>80 70324 Dual port IDT CEMOS HI: SEL > 90 RAM 70V25 Dual port IDT CMOS HI: SEU <3.46 [3] SRAM ssat ~ 5E-7 cm2/bit; SEL >80
-----> FIFOs
7201T 9x512 FIFO IDT 6, 8, HI: SEL varied by EPI: [4], 6u EPI was 10, 12u 6u >80; 8u ~ 50-60; SEL resistant, Split-Epi 10u >26.6; 12u ~ 26.6 but very SEU 6u: ssat <1E-6 sensitive P: 6u not easily upset 7203ERP 9x2048 FIFO IDT CMOS/epi HI: SEU 8 - 11.6 control SEU 20 SEL ~ 35 7203L40DB 9x2048 FIFO IDT Bulk HI: SEU ~ 3.4 ssat ~ 5.5E-3 SEL 15-22 7204 9x4096 FIFO IDT Bulk CMOS HI: SEU 8 - 11.6 SEL 16
-----> Microprocessors and Peripherals
80386-20 Micro- Intel CHMOS IV HI: SEU ~ 3.38 [6], Microlatch processor SEL 37.1 - 59.9 only 80386DX-25 Micro- Intel CHMOS IV HI: SEL 29-37.1 [6], Destr. SEL processor only 82380-20/B Integrated Intel CHMOS III HI: SEU <3.38 [6], Destr. SEL, Peripheral SEL 12.2 - 26.2 Control/ Mode SEU 82380-16 Integrated Intel CHMOS III HI: SEL <12 [6], SEL only Peripheral 80387 Math Intel CHMOS IV HI: SEU ~ 3.38 [6], Destr. SEL Coprocessor SEL 37.1-59.9 only 80486DX-33 Micro- Intel CHMOS IV HI: SEU < 3.53 [6], Destr. SEL processor w/cache on SEU 3.83 - 8.27 w/cache off SEL 20 80486DX2-66 Micro- Intel CHMOS V HI: SEU 3.83-8.27 [6], 1 device saw processor w/cache on or off microlatch @59.6; SEL 59.6 2 others SEL >80
-----> Other
49C460 EDAC IDT CMOS/epi HI: SEU 20-25 controller control SEU 26.6 SEL >80 74FCT163 16 bit IDT 0.5u HI: SEU ~ 20 3.3V/5V 374 Register CEMOS SEL ~ 25 translation ssat>5E-4 74FCT163 16 bit IDT 0.5u HI: SEU >25.2 3.3V/5V 245 Transceiver CEMOS SEL ~ 25.2 translation ssat>5E-4 HR2340 Test Metal Honeywell CMOS HI: SEU 14-19 ssat 8.4E-7-2E-6 cm2/flip-flop, depends on mode SEL >100 MIC4427 Mosfet Micrel Bipolar HI: SEL >72 SEL only driver
...Return to the paper Single Event Effect Proton & Heavy Ion Test Results in Support of Candidate NASA Programs